InGaAsN/GaAs lasers: high performance and long lifetime

C. S. Peng; Janne Konttinen; Tomi Jouhti; Markus Pessa

doi:10.1117/12.586658

1 April 2005 InGaAsN/GaAs lasers: high performance and long lifetime

C. S. Peng, Janne Konttinen, Tomi Jouhti, Markus Pessa

Proceedings Volume 5738, Novel In-Plane Semiconductor Lasers IV; (2005) https://doi.org/10.1117/12.586658
Event: Integrated Optoelectronic Devices 2005, 2005, San Jose, California, United States

Abstract

High power and single mode InGaAsN ridge waveguide lasers were developed. The pulsed the maximum output power was 240 mW at room temperature (RT). The threshold was 15 mA at 20°C. The ridge waveguide laser could work beyond 120°C. For cw operation, the lasers show a maximum output up to 40 mW RT. The broad area lasers using the same materials has been working under continuous-wave operation at constant current (80% of maximum output) for more than 42,800 device-hours at 30°C with as-cleaved facets. They are still working well.

Citation Download Citation

C. S. Peng, Janne Konttinen, Tomi Jouhti, and Markus Pessa "InGaAsN/GaAs lasers: high performance and long lifetime", Proc. SPIE 5738, Novel In-Plane Semiconductor Lasers IV, (1 April 2005); https://doi.org/10.1117/12.586658

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