AlGaInP light-emitting diode with metal reflector structure

Wayne Jan; Tien-fu Liao; Tzer Peng Chen; Chih Sung Chang

doi:10.1117/12.589947

7 March 2005 AlGaInP light-emitting diode with metal reflector structure

Wayne Jan, Tien-fu Liao, Tzer Peng Chen, Chih Sung Chang

Proceedings Volume 5739, Light-Emitting Diodes: Research, Manufacturing, and Applications IX; (2005) https://doi.org/10.1117/12.589947
Event: Integrated Optoelectronic Devices 2005, 2005, San Jose, California, United States

Abstract

We have remarkably improved the Metal Bonding (MB) AlGaInP LED luminous efficiency in the dominant wavelength range form 570 nm to 630 nm. Micro Shaping technology is fabricated on the Surface of LED Chip in order to enhance the extraction efficiency. As a result, the luminous efficiency of the new micro shaping Structure AlGaInP LED can achieve 80 lm/w, at 615 nm dominant wavelength under 20mA injection current. The luminous efficiency increased up to 50% than report valve before.

Citation Download Citation

Wayne Jan, Tien-fu Liao, Tzer Peng Chen, and Chih Sung Chang "AlGaInP light-emitting diode with metal reflector structure", Proc. SPIE 5739, Light-Emitting Diodes: Research, Manufacturing, and Applications IX, (7 March 2005); https://doi.org/10.1117/12.589947

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