Paper
7 March 2005 Half-watt high-power single mode superluminescent LED at 1335 nm with single-facet electro-optical efficiency of 28%
Oleg A. Konoplev, S. Park, Simarjeet S. Saini, Scott A. Merritt, Yimin Hu, Vince Luciani, Peter J. S. Heim, R. Enck, Dennis Bowler
Author Affiliations +
Abstract
We report on half-Watt level single spatial mode superluminescent laser diode at 1335 nm. Output optical power in excess of 500 mW from a single facet of angle-striped waveguide was realized at 10°C of heatsink temperature with peak electro-optical efficiency of 28%. To our knowledge this is the highest optical power and electro-optic conversion efficiency in a SLED device reported so far in the literature. Further optimization could lead to revolutionary result: 1) the creation of a high power optical device (SLED) with electro-optical efficiencies approaching and/or exceeding that of Fabry-Perot lasers (counting both facet outputs) with absolute optical power levels compared to that of Fabry-Perot lasers, 2) Electro-optical efficiencies approaching internal quantum efficiencies which could well exceed the 70-80% range observed in present commercial semiconductor laser and light-emitting structures.
© (2005) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Oleg A. Konoplev, S. Park, Simarjeet S. Saini, Scott A. Merritt, Yimin Hu, Vince Luciani, Peter J. S. Heim, R. Enck, and Dennis Bowler "Half-watt high-power single mode superluminescent LED at 1335 nm with single-facet electro-optical efficiency of 28%", Proc. SPIE 5739, Light-Emitting Diodes: Research, Manufacturing, and Applications IX, (7 March 2005); https://doi.org/10.1117/12.592043
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Cited by 1 scholarly publication and 2 patents.
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KEYWORDS
Electro optics

Reflectivity

Mirrors

Heatsinks

Internal quantum efficiency

Semiconductor lasers

External quantum efficiency

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