Novel methodology of employing scatterometry to assess optical proximity correction test pattern

S. S. Suh; I. S. Kim; E. M. Lee; Y. S. Kang; S. J. Lee; S. G. Woo; H. K. Cho

doi:10.1117/12.598698

10 May 2005 Novel methodology of employing scatterometry to assess optical proximity correction test pattern

S. S. Suh, I. S. Kim, E. M. Lee, Y. S. Kang, S. J. Lee, S. G. Woo, H. K. Cho

Proceedings Volume 5752, Metrology, Inspection, and Process Control for Microlithography XIX; (2005) https://doi.org/10.1117/12.598698
Event: Microlithography 2005, 2005, San Jose, California, United States

Abstract

While optical lithography is being pushed to its limits, there is a general concern as to which metrology tool is more suitable for inspection of new generation devices. Scatterometry is one of the few types of metrology that has true in-situ potential for deep submicron critical dimension and profile analysis. Physical metrology is the key element in maintaining adequate and affordable process latitude in lithography processing. Accurate metrology is needed for characterizing and monitoring the processing states, such as exposure, focus, post-exposure bake (PEB), critical dimension (CD) resolution, and uniformity. In addition, scatterometry is a good candidate tool to obtain data necessary to perform model-based optical proximity correction (OPC). However, it is unknown as to current scatterometry provides necessary sensitivity to yield results acceptable for OPC usage. In this paper, we have utilized scatterometry to measure test patterns used in a model-based OPC and performed OPC on DRAM bitline core and periphery adjoining region then, its results are compared to those model-based OPC performed using data obtained from CD-SEM and V-SEM. In doing so, we have attempted to obtain an ideal model which provides best performance in context of OPC. Furthermore, we have discussed 1-D and 2-D types of test patterns that are acceptable for OPC purpose and provided the verification results for each model using commercially available software.

Citation Download Citation

S. S. Suh, I. S. Kim, E. M. Lee, Y. S. Kang, S. J. Lee, S. G. Woo, and H. K. Cho "Novel methodology of employing scatterometry to assess optical proximity correction test pattern", Proc. SPIE 5752, Metrology, Inspection, and Process Control for Microlithography XIX, (10 May 2005); https://doi.org/10.1117/12.598698

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available

Members: $17.00

Non-members: $21.00 ADD TO CART

PROCEEDINGS
10 PAGES

DOWNLOAD PAPER SAVE TO MY LIBRARY

GET CITATION

RIGHTS & PERMISSIONS

Get copyright permission Get copyright permission on Copyright Marketplace

KEYWORDS

Optical proximity correction

Scatterometry

Metrology

Data modeling

Semiconducting wafers

Critical dimension metrology

Model-based design

Show All Keywords

Keywords/Phrases

Search In:

Publication Years