All i-line lift-off T-gate process and materials

Medhat A. Toukhy; Ping-Hung Lu; Salem K. Mullen

doi:10.1117/12.602636

4 May 2005 All i-line lift-off T-gate process and materials

Medhat A. Toukhy, Ping-Hung Lu, Salem K. Mullen

Proceedings Volume 5753, Advances in Resist Technology and Processing XXII; (2005) https://doi.org/10.1117/12.602636
Event: Microlithography 2005, 2005, San Jose, California, United States

Abstract

An all i-line 0.22 um T-gate process is demonstrated. A resist structure suitable for metal deposition and lift-off is constructed sequentially with two different resist materials. The lithographic process is described in details in this paper.

Citation Download Citation

Medhat A. Toukhy, Ping-Hung Lu, and Salem K. Mullen "All i-line lift-off T-gate process and materials", Proc. SPIE 5753, Advances in Resist Technology and Processing XXII, (4 May 2005); https://doi.org/10.1117/12.602636

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available