Evaluation of a novel photoacid generator for chemically amplified photoresist with ArF exposure

Toshikage Asakura; Hitoshi Yamato; Tobias Hintermann; Masaki Ohwa

doi:10.1117/12.600327

4 May 2005 Evaluation of a novel photoacid generator for chemically amplified photoresist with ArF exposure

Toshikage Asakura, Hitoshi Yamato, Tobias Hintermann, Masaki Ohwa

Proceedings Volume 5753, Advances in Resist Technology and Processing XXII; (2005) https://doi.org/10.1117/12.600327
Event: Microlithography 2005, 2005, San Jose, California, United States

Abstract

Recently we have developed a novel non-ionic photoacid generator (PAG), 2-[2,2,3,3,4,4,5,5,6,6,7,7-dodecafluoro-1-(nonafluorobutylsulfonyloxyimino)-heptyl]-fluorene (DNHF), which generates a strong acid (perfluorobutanesulfonic acid) by light irradiation and is applicable to chemically amplified ArF photoresist. The studies on quantum yield of the PAG under 193 nm exposure in an ArF model formulation and in a solution comparing with the ones of ionic PAGs, triphenylsulfonium perfluorobutanesulfonate (TPSPB) and Bis(4-tert-butylphenyl)iodonium perfluorobutanesulfonate (BPIPB) revealed that this compound is superior in photo efficiency to the others. PAG leaching into water from the resist during a model immersion process was investigated in detail. No leaching of DNHF was observed under the immersion process while significant amount of TPSBP was eluted. Dissolution rate of the resist prepared under a model condition of ArF immersion exposure was monitored. No clear difference against dry condition was observed.

Citation Download Citation

Toshikage Asakura, Hitoshi Yamato, Tobias Hintermann, and Masaki Ohwa "Evaluation of a novel photoacid generator for chemically amplified photoresist with ArF exposure", Proc. SPIE 5753, Advances in Resist Technology and Processing XXII, (4 May 2005); https://doi.org/10.1117/12.600327

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