Resist development status for immersion lithography

Hiromitsu Tsuji; Masaaki Yoshida; Keita Ishizuka; Tomoyuki Hirano; Kotaro Endo; Mitsuru Sato

doi:10.1117/12.599485

4 May 2005 Resist development status for immersion lithography

Hiromitsu Tsuji, Masaaki Yoshida, Keita Ishizuka, Tomoyuki Hirano, Kotaro Endo, Mitsuru Sato

Proceedings Volume 5753, Advances in Resist Technology and Processing XXII; (2005) https://doi.org/10.1117/12.599485
Event: Microlithography 2005, 2005, San Jose, California, United States

Abstract

Immersion lithography has already demonstrated superior performance for next generation semiconductor manufacturing, while some challenges with contact immersion fluids and resist still remain. There are many interactions to be considered with regards to the solid and liquid interface. Resist elusion in particular requires very careful attention since the impact on the lens and fluid supply system in exposure tool could pose a significant risk at the manufacturing stage. TOK developed a screening procedure to detect resist elution of ion species down to ppb levels during non and post exposure steps. It was found that the PAG cation elution is affected by molecular weight and structure while the PAG anion elution was dependent on the molecular structure and mobility. In this paper, lithographic performance is also discussed with the low elution type resist.

Citation Download Citation

Hiromitsu Tsuji, Masaaki Yoshida, Keita Ishizuka, Tomoyuki Hirano, Kotaro Endo, and Mitsuru Sato "Resist development status for immersion lithography", Proc. SPIE 5753, Advances in Resist Technology and Processing XXII, (4 May 2005); https://doi.org/10.1117/12.599485

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