Ferroelectricity of BiFeO3 prepared by the chemical solution deposition method

Caixia Yang; Yinyin Lin; Ting-ao Tang

doi:10.1117/12.607631

8 December 2004 Ferroelectricity of BiFeO₃ prepared by the chemical solution deposition method

Caixia Yang, Yinyin Lin, Ting-ao Tang

Proceedings Volume 5774, Fifth International Conference on Thin Film Physics and Applications; (2004) https://doi.org/10.1117/12.607631
Event: Fifth International Conference on Thin Film Physics and Applications, 2004, Shanghai, China

Abstract

Bismuth ferric thin films were fabricated on Pt/Ti/SiO₂/Si substrates by the chemical solution deposition Technique. The films were annealed at different temperature using a rapid thermal processor. DTA-TG and DSC-TG were used to study the reaction and crystallization during the process. The influence of the preheated process and annealing temperature on the structure and the morphology of the film were discussed. XRD and SEM were employed to investigate the crystal structure and the phase of the films annealed at different temperatures. The pure phase BiFeO₃ thin films were obtained when the film was annealed under the temperature of 800°C. Saturated ferroelectric hysterersis loops are observed. The spontaneous polarization and remnant polarization are 6.9μC/cm² and 2.8μC/cm² respectively.

Citation Download Citation

Caixia Yang, Yinyin Lin, and Ting-ao Tang "Ferroelectricity of BiFeO₃ prepared by the chemical solution deposition method", Proc. SPIE 5774, Fifth International Conference on Thin Film Physics and Applications, (8 December 2004); https://doi.org/10.1117/12.607631

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