Study on DC-contact MEMS switches

J. J. Chen; H. Z. Wei; M. L. Hu; Zong Shen Lai

doi:10.1117/12.607901

8 December 2004 Study on DC-contact MEMS switches

J. J. Chen, H. Z. Wei, M. L. Hu, Zong Shen Lai

Proceedings Volume 5774, Fifth International Conference on Thin Film Physics and Applications; (2004) https://doi.org/10.1117/12.607901
Event: Fifth International Conference on Thin Film Physics and Applications, 2004, Shanghai, China

Abstract

This paper presents the design, fabrication and performance of a metal-to-metal contact shunt micro-electro-mechanical (MEMS) switch. The switch was composed of a fixed-fixed Al_0.96Si_0.04 alloy beam with two pull-down electrodes and a central dc-contact area. The switch was placed in an in-line configuration in a coplanar waveguide transmission line. The best RF performance shows insertion loss of less than 0.3dB and isolation of greater than 35dB for all frequencies up to 10 GHz.

Citation Download Citation

J. J. Chen, H. Z. Wei, M. L. Hu, and Zong Shen Lai "Study on DC-contact MEMS switches", Proc. SPIE 5774, Fifth International Conference on Thin Film Physics and Applications, (8 December 2004); https://doi.org/10.1117/12.607901

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