Study on the stress of silicon nitride thin films prepared by PECVD

Ying Yu; Zongzi Luo; Xinqiao Weng

doi:10.1117/12.607626

8 December 2004 Study on the stress of silicon nitride thin films prepared by PECVD

Ying Yu, Zongzi Luo, Xinqiao Weng

Proceedings Volume 5774, Fifth International Conference on Thin Film Physics and Applications; (2004) https://doi.org/10.1117/12.607626
Event: Fifth International Conference on Thin Film Physics and Applications, 2004, Shanghai, China

Abstract

The residual stresses on silicon nitride thin films that were fabricated by PECVD were studied in this paper. A wafer-curvature measurement method was used to determine the stresses of silicon nitride films. The structure of fixed-fixed beam was also developed to compare with the stress measurement. The contributions of processing parameters on the stress of silicon nitride films were analyzed.

Citation Download Citation

Ying Yu, Zongzi Luo, and Xinqiao Weng "Study on the stress of silicon nitride thin films prepared by PECVD", Proc. SPIE 5774, Fifth International Conference on Thin Film Physics and Applications, (8 December 2004); https://doi.org/10.1117/12.607626

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