Paper
20 May 2005 Light emitting diode arrays for HWIL sensor testing
Naresh C. Das, P. Shen, George Simonis, John Gomes, Kim Olver
Author Affiliations +
Abstract
We report here the light emission from IR interband-cascade (IC) Type-II-super lattice LED structures. We employed two different IC epitaxial structures for the LED experiments consisting of 9 or 18 periods of active super lattice gain regions separated by multilayer injection regions. The light output (and the voltage drop) of the LEDs is observed to increase with increase of number of IC active regions in the device. The voltage drop decreases with increase of mesa size and light emission increases with mesa sizes. We have made 8x7 2-D LED array flip-chip bonded to fan out array. The black body emissive temperature is 650 and 1050 K for LED operation at room and liquid nitrogen temperature respectively. A comparison of different IR sources for scene generation is presented.
© (2005) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Naresh C. Das, P. Shen, George Simonis, John Gomes, and Kim Olver "Light emitting diode arrays for HWIL sensor testing", Proc. SPIE 5785, Technologies for Synthetic Environments: Hardware-in-the-Loop Testing X, (20 May 2005); https://doi.org/10.1117/12.602326
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CITATIONS
Cited by 6 scholarly publications and 1 patent.
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KEYWORDS
Light emitting diodes

Black bodies

Sensors

Gallium antimonide

Resistors

Mid-IR

Body temperature

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