Paper
30 June 2005 Study of the proximity effect in high q inductors for wireless LAN (WLAN)
I. Cendoya, J. Mendizabal, N. Sainz, I. Gutierrez, U. Alvarado, J. de No
Author Affiliations +
Proceedings Volume 5837, VLSI Circuits and Systems II; (2005) https://doi.org/10.1117/12.608358
Event: Microtechnologies for the New Millennium 2005, 2005, Sevilla, Spain
Abstract
The quality factor (Q) measures the ability of a component to preserve the energy received during the circuit operation. Q is the most important parameter in an inductor. It is mainly limited by the loss due to inductor metal resistance, substrate resistance, and the resistance associated with induced Eddy current below the inductor metal trace. One of the pernicious effects for the Q of an inductor is the proximity effect. Proximity effect is caused by the magnetic field generated by the own inductor and induces parasitic currents in the metal tracks causing an increase in the resistance and thus diminishing the Q. The objective of this paper is to study this effect and consequently to obtain some inductor design rules, which allow the designer to implement high quality inductors. This paper is focused on balanced inductors for a WLAN application using CMOS 0.18 μm technology.
© (2005) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
I. Cendoya, J. Mendizabal, N. Sainz, I. Gutierrez, U. Alvarado, and J. de No "Study of the proximity effect in high q inductors for wireless LAN (WLAN)", Proc. SPIE 5837, VLSI Circuits and Systems II, (30 June 2005); https://doi.org/10.1117/12.608358
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KEYWORDS
Metals

Resistance

Silicon

CMOS technology

Magnetism

Inductance

Integrated circuits

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