Assessment of laser ablation techniques in a-si technologies for position-sensor development

C. Molpeceres; S. Lauzurica; J. L. Ocana; J. J. Gandia; L. Urbina; J. Carabe

doi:10.1117/12.608823

7 July 2005 Assessment of laser ablation techniques in a-si technologies for position-sensor development

C. Molpeceres, S. Lauzurica, J. L. Ocana, J. J. Gandia, L. Urbina, J. Carabe

Proceedings Volume 5840, Photonic Materials, Devices, and Applications; (2005) https://doi.org/10.1117/12.608823
Event: Microtechnologies for the New Millennium 2005, 2005, Sevilla, Spain

Abstract

Laser micromachining of semiconductor and Transparent Conductive Oxides (TCO) materials is very important for the practical applications in photovoltaic industry. In particular, a problem of controlled ablation of those materials with minimum of debris and small heat affected zone is one of the most vital for the successful implementation of laser micromachining. In particular, selective ablation of thin films for the development of new photovoltaic panels and sensoring devices based on amorphous silicon (a-Si) is an emerging field, in which laser micromachining systems appear as appropriate tools for process development and device fabrication. In particular, a promising application is the development of purely photovoltaic position sensors. Standard p-i-n or Schottky configurations using Transparent Conductive Oxides (TCO), a-Si and metals are especially well suited for these applications, appearing selective laser ablation as an ideal process for controlled material patterning and isolation. In this work a detailed study of laser ablation of a widely used TCO, Indium-tin-oxide (ITO), and a-Si thin films of different thicknesses is presented, with special emphasis on the morphological analysis of the generated grooves. The profiles of ablated grooves have been studied in order to determine the best processing conditions, i.e. laser pulse energy and wavelength, and to asses this technology as potentially competitive to standard photolithographic processes. The encouraging results obtained, with well defined ablation grooves having thicknesses in the order of 10 μm both in ITO and a-Si, open up the possibility of developing a high-performance double Schottky photovoltaic matrix position sensor.

Citation Download Citation

C. Molpeceres, S. Lauzurica, J. L. Ocana, J. J. Gandia, L. Urbina, and J. Carabe "Assessment of laser ablation techniques in a-si technologies for position-sensor development", Proc. SPIE 5840, Photonic Materials, Devices, and Applications, (7 July 2005); https://doi.org/10.1117/12.608823

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KEYWORDS

Laser ablation

Amorphous silicon

Thin films

Photovoltaics

Scanning electron microscopy

Ultraviolet radiation

Diode pumped solid state lasers

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