Paper
31 August 2005 Characterization of extreme ultraviolet (EUV) emission from xenon generated using a compact plasma-discharge source for lithography applications
H. Merabet, R. Bista, C. Schubert, S. Fuelling, R. Bruch, A. L. Godunov
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Abstract
In this work we have studied the generation of Extreme Ultraviolet (EUV) light by a novel Compact Electron Cyclotron Resonance Ion Source (CECRIS). The EUV emission diagnostics of the ECR plasma was accomplished by means of a 1.5 m Grazing Incidence Monochromator which was operated in a wavelength range of 4-90 nm under the condition of medium to high resolution to discriminate between spectra arising from different Xeq+ (q = 1-10) charge states. One of the major accomplishments of this study is assignment of numerous new optical transitions for Xenon in the 10-80 nm range under absolute conditions to create a database for further investigations. High resolution spectra were recorded confirming fair contributions from highly excited Xe10+ and Xe9+ ionic states. Major outcome of this work is that the Xe10+ ion emission with λ = 13.4 nm may occurs with such a simplified and compact ECR source. The EUV emission of this particular line is of great interest for lithography applications.
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H. Merabet, R. Bista, C. Schubert, S. Fuelling, R. Bruch, and A. L. Godunov "Characterization of extreme ultraviolet (EUV) emission from xenon generated using a compact plasma-discharge source for lithography applications", Proc. SPIE 5918, Laser-Generated, Synchrotron, and Other Laboratory X-Ray and EUV Sources, Optics, and Applications II, 59180E (31 August 2005); https://doi.org/10.1117/12.613983
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KEYWORDS
Xenon

Extreme ultraviolet

Ions

Plasma

Extreme ultraviolet lithography

Monochromators

Lithography

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