Si-based UV transparent subwavelength optical elements

Chien Chieh Lee; Che-Lung Hsu; Chih Ming Wang; Jing Yi Chen; Jenq Yang Chang; Gou Chung Chi

doi:10.1117/12.616319

27 August 2005 Si-based UV transparent subwavelength optical elements

Chien Chieh Lee, Che-Lung Hsu, Chih Ming Wang, Jing Yi Chen, Jenq Yang Chang, Gou Chung Chi

Proceedings Volume 5931, Nanoengineering: Fabrication, Properties, Optics, and Devices II; 593115 (2005) https://doi.org/10.1117/12.616319
Event: Optics and Photonics 2005, 2005, San Diego, California, United States

Abstract

The hydrogenated Silicon nitride film is well developed to form a passivation layer for non-volatile memory devices. It has many superior chemical, electrical, and mechanical properties. In addition, it also has excellent optical properties. It is transparent in UV and DUV range, with a high refractive index of about 1.7~2. Owing to its superior mechanical and optical properties, we used a hydrogenated silicon nitride (SiN_XH_Y) membrane as an optical phase element. By using e-beam lithography, we demonstrate on feasibility for the fabrication of subwavelength optical elements, such as waveplate, polarizer, and polarized beam splitter on a silicon-based low stress SiN_XH_Y membrane for the UV region applications. An SiN_XH_Y film was deposited by plasma enhanced chemical vapor deposition (PECVD) and the free- standing membrane is formed by KOH silicon backside etching, from which substrate materials are removed. The membrane's morphology and geometries of subwavelength optical elements were verified by means of an scanning electron microscope (SEM), and the optical performance characteristics of these subwavelength optical elements are shown. The experimental datas agree well with theoretical predictions.

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Chien Chieh Lee, Che-Lung Hsu, Chih Ming Wang, Jing Yi Chen, Jenq Yang Chang, and Gou Chung Chi "Si-based UV transparent subwavelength optical elements", Proc. SPIE 5931, Nanoengineering: Fabrication, Properties, Optics, and Devices II, 593115 (27 August 2005); https://doi.org/10.1117/12.616319

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KEYWORDS

Silicon

Ultraviolet radiation

Optical components

Thin films

Refractive index

Silicon films

Plasma enhanced chemical vapor deposition

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