Narrow spectral band monolithic lead-chalcogenide-on-Si mid-IR photodetectors

Hans Zogg; Martin Arnold

doi:10.1117/12.621885

29 September 2005 Narrow spectral band monolithic lead-chalcogenide-on-Si mid-IR photodetectors

Hans Zogg, Martin Arnold

Proceedings Volume 5957, Infrared Photoelectronics; 59570B (2005) https://doi.org/10.1117/12.621885
Event: Congress on Optics and Optoelectronics, 2005, Warsaw, Poland

Abstract

Narrow spectral band infrared detectors are required for multispectral infrared imaging. Wavelength selectivity can be obtained by placing passive line filters in front of the detectors, or, the preferred choice, by making the detectors themselfs wavelength selective. We review the first photovoltaic resonant cavity enhanced detectors (RCED) for the mid-IR range. The lead-chalcogenide (PbEuSe) photodetector is placed as a very thin layer inside an optical cavity. At least one side is terminated with an epitaxial Bragg mirror (consisting of quarter wavelength PbEuSe/BaF2 pairs), while the second mirror may be a metal. Linewidths are as narrow as 37 nm at a peak wavelength of 4400 nm, and peak quantum efficiencies up to above 50% are obtained.

Citation Download Citation

Hans Zogg and Martin Arnold "Narrow spectral band monolithic lead-chalcogenide-on-Si mid-IR photodetectors", Proc. SPIE 5957, Infrared Photoelectronics, 59570B (29 September 2005); https://doi.org/10.1117/12.621885

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