CONFERENCE PROCEEDINGS
Advanced Search
Home > Proceedings > Volume 5957 > Article
Paper
29 September 2005 Photoluminescence study of (Er3+ + Yb3+) doped gallium nitride layers fabricated by magnetron sputtering
Vaclav Prajzler, Ivan Hüttel, Jarmila Spirkova, Jiri Oswald, Vratislav Perina, Jiri Zavadil, Vladimír Machovic, Zdenek Burian
Author Affiliations +
Proceedings Volume 5957, Infrared Photoelectronics; 595714 (2005) https://doi.org/10.1117/12.621366
Event: Congress on Optics and Optoelectronics, 2005, Warsaw, Poland
Abstract
Erbium (Er3+) and Ytterbium (Yb3+) ions doped Gallium Nitride (GaN) layers were deposited by RF magnetron sputtering. Deposition was carried out in Ar + N2 gas mixture using Ga and Ga2O3 target as the source of Gallium. For the erbium and ytterbium doping, the Er2O3, Yb2O3 pellets, or Er and Yb powder were laid on the top of the Ga2O3 target. The GaN layers were deposited on silicon and Corning glass substrates. The properties of the GaN layers were investigated by using X-ray diffraction, Raman spectroscopy, absorption spectra and photoluminescence spectra. Prism coupling mode spectroscopy was used to measure the waveguiding properties. The composition of the fabricated samples was determined by using nuclear chemical analysis as Rutherford Backscattering Spectroscopy (RBS) and Elastic Recoil Detection Analysis (ERDA). The results of the experiments were evaluated in terms of the relations between the technology approaches and the composition and luminescence properties of the fabricated thin films. Up to now the best results, which can be utilized for a structure operating at 1550 nm (when pumped at 980 nm), were obtained when using (erbium plus ytterbium) metallic powder and Corning glass as the substrate for the deposition.
© (2005) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Citation Download Citation
Vaclav Prajzler, Ivan Hüttel, Jarmila Spirkova, Jiri Oswald, Vratislav Perina, Jiri Zavadil, Vladimír Machovic, and Zdenek Burian "Photoluminescence study of (Er3+ + Yb3+) doped gallium nitride layers fabricated by magnetron sputtering", Proc. SPIE 5957, Infrared Photoelectronics, 595714 (29 September 2005); https://doi.org/10.1117/12.621366
ACCESS THE FULL ARTICLE
ORGANIZATIONAL
Sign in with credentials provided by your organization.
INSTITUTIONAL
Select your institution to access the SPIE Digital Library.
SELECT YOUR INSTITUTION
PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.
PERSONAL SIGN IN
No SPIE Account? Create one
PURCHASE THIS CONTENT
SUBSCRIBE TO DIGITAL LIBRARY
50 downloads per 1-year subscription
Members: $195
Non-members: $335 ADD TO CART
25 downloads per 1 - year subscription
Members: $145
Non-members: $250 ADD TO CART
PURCHASE SINGLE ARTICLE
Includes PDF, HTML & Video, when available
Members: $17.00
Non-members: $21.00 ADD TO CART
PROCEEDINGS
 9 PAGES
DOWNLOAD PAPER SAVE TO MY LIBRARY
GET CITATION
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Erbium
Gallium nitride
Ytterbium
Sputter deposition
Gallium
Ions
Luminescence
RELATED CONTENT
Subscribe to Digital Library
Receive Erratum Email Alert
Back to Top