Short wavelength Hg1-xCdxTe infrared detectors prepared by loophole technology

Yan-Li Shi; Sheng-Qiong Lei; Tie-Feng Yang; Ju-Sheng Zhuang; Yi Cai

doi:10.1117/12.624167

14 October 2005 Short wavelength Hg_1-xCd_xTe infrared detectors prepared by loophole technology

Yan-Li Shi, Sheng-Qiong Lei, Tie-Feng Yang, Ju-Sheng Zhuang, Yi Cai

Proceedings Volume 5964, Detectors and Associated Signal Processing II; 596409 (2005) https://doi.org/10.1117/12.624167
Event: Optical Systems Design 2005, 2005, Jena, Germany

Abstract

Short wavelength Hg_1-xCd_xTe infrared detectors were novelly fabricated by loophole technique basing on Liquid Phase Epitaxial materials, rather than conventional ion implantation technology. The Hg_1-xCd_xTe material was p type doped by Hg vacancy. The formed sensitive area is an annulus centered on the circular junction. The dimension of the annulus depends on the diffusion lengths of minority carriers in both the p and n regions. Laser Beam Induced Current (LBIC) signals of Scan Laser Microscope measurement were used to determine the key parameters such as the minority diffusion length, the size of both n type and p type regions as well as uniformities of the arrays. Good uniformities were observed for the 4×4 HgCdTe photovoltaic arrays by LBIC signals analysis. Furthermore, exponential decays in LBIC signals revealed average minority carrier diffusion length in p type region was around 9 micron, and the average diameter of the n type annulus was 17 micron. The I-V characteristic measurement of the photodiodes determined average zero bias dynamic resistance R₀ which was 1.2E9Ω, and zero bias dynamic resistance junction area product R₀A was calculated to be average 7.02E3Ωcm². Further investigations have been performed for the electro-optical performance examination. Infrared spectral response measurement results showed peak wavelength lay around 2.2 micron with cutoff wavelength about 3.5 micron under temperature 77K, average blackbody detectivity D* was 1.71E10cm Hz^1/2W^-1.

Citation Download Citation

Yan-Li Shi, Sheng-Qiong Lei, Tie-Feng Yang, Ju-Sheng Zhuang, and Yi Cai "Short wavelength Hg_1-xCd_xTe infrared detectors prepared by loophole technology", Proc. SPIE 5964, Detectors and Associated Signal Processing II, 596409 (14 October 2005); https://doi.org/10.1117/12.624167

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