Paper
4 November 2005 Simulation-based photomask qualification using i-Virtual Stepper
Author Affiliations +
Abstract
Mask manufacturers and mask users continue to pursue improvements in mask inspection and qualification processes driving standards to guarantee the highest performance of advanced photomasks while maintaining a high degree of predictability of turn-around-time. Simulation-based defect analysis and dispositioning has become an area of much interest for both mask manufacturers and mask users. Repairing only the defects that impact wafer level performance (lithographically significant) improves both mask cycle time and eliminates unnecessary and costly repairs. Mask maker and mask users can utilize defect simulation as a common standard by which to benchmark the quality of results. We report in this paper the results of a joint evaluation of the i-Virtual Stepper system (i-VSS) the automated simulation based defect dispositioning software solution in an advanced photomask qualification flow. Results discussed include the optimization and automation of the mask inspection flow using i-VSS, simulation accuracy comparisons of i-VSS versus AIMS versus wafer printability for binary and phase shifting masks at 130nm, 90nm, and 65nm technology nodes, and a comparison of the iVirtual Stepper system's automated defect severity scoring (ADSS) versus manual defect dispositioning.
© (2005) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Darren Taylor, Ray Morgan, and Susan Hu "Simulation-based photomask qualification using i-Virtual Stepper", Proc. SPIE 5992, 25th Annual BACUS Symposium on Photomask Technology, 599217 (4 November 2005); https://doi.org/10.1117/12.634666
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Photomasks

Semiconducting wafers

Inspection

Lithography

Manufacturing

Binary data

Reticles

RELATED CONTENT

Mighty high-T lithography for 65-nm generation contacts
Proceedings of SPIE (June 26 2003)
Mask quality assurance from a user's perspective
Proceedings of SPIE (January 01 1994)
Critical dimension uniformity using reticle inspection tool
Proceedings of SPIE (September 29 2009)
OPC beyond 0.18 mm: OPC on PSM gates
Proceedings of SPIE (July 05 2000)
Using the AIMS 45-193i for hyper-NA imaging applications
Proceedings of SPIE (October 30 2007)

Back to Top