Paper
5 December 2005 High-performance 850-nm superluminescent diodes
Author Affiliations +
Proceedings Volume 6020, Optoelectronic Materials and Devices for Optical Communications; 60202U (2005) https://doi.org/10.1117/12.635614
Event: Asia-Pacific Optical Communications, 2005, Shanghai, China
Abstract
This paper presents the structure design and fabrication technology of 850nm wavelength high power wide spectrum Superluminescent Diodes (SLDs) as non-coherent light source, for the application of fiber gyroscope and other areas. Quantum Well epitaxial structure, unpumped absorbing region structure and facet coating methods have been adopted for enhancing the gain coefficient, output power and the reduction or elimination of lasing oscillation. As typical device performance results, SLDs have been demonstrated with central wavelength of 848-851nm, spectrum FWHM no less than 20nm, and no less than 7mW output under 120mA injection current. The devices operated up to 100°C.
© (2005) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Hui Li, Jing Zhang, Yi Qu, Xin Gao, Baoxue Bo, and Guojun Liu "High-performance 850-nm superluminescent diodes", Proc. SPIE 6020, Optoelectronic Materials and Devices for Optical Communications, 60202U (5 December 2005); https://doi.org/10.1117/12.635614
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KEYWORDS
Superluminescent diodes

Gallium arsenide

Quantum wells

Antireflective coatings

Structural design

Cladding

Doping

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