High power output and temperature characteristics of 1.06&#956;m diode array module

Shun Yao; Getao Tao; Guoguang Lu; Yun Liu; Biao Zhang; Di Yao; Lijun Wang

doi:10.1117/12.667132

21 December 2005 High power output and temperature characteristics of 1.06μm diode array module

Shun Yao, Getao Tao, Guoguang Lu, Yun Liu, Biao Zhang, Di Yao, Lijun Wang

Proceedings Volume 6028, ICO20: Lasers and Laser Technologies; 60280G (2005) https://doi.org/10.1117/12.667132
Event: ICO20:Optical Devices and Instruments, 2005, Changchun, China

Abstract

In this paper high power diode array module with an emission wavelength of 1.06μm is presented. The epitaxial structure is an InGaAs/GaAsP strained-compensated single-quantum well structure. Laser bars with a fill factor of 50% are processed and show a good temperature characteristics with a slope efficiency only decreasing from 1.08W/A to 1.06W/A when the temperature of heat sink changes from 20^oC to 40^o C. The module's CW output power can reach to 68.5W at a current of 80A when the temperature of cooling water is 20^o C. The central wavelength is 1059.4nm.

Citation Download Citation

Shun Yao, Getao Tao, Guoguang Lu, Yun Liu, Biao Zhang, Di Yao, and Lijun Wang "High power output and temperature characteristics of 1.06μm diode array module", Proc. SPIE 6028, ICO20: Lasers and Laser Technologies, 60280G (21 December 2005); https://doi.org/10.1117/12.667132

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