Paper
15 February 2006 Diode laser efficiency increases enable >400-W peak power from 1-cm bars and show a clear path to peak powers in excess of 1-kW
Paul Crump, Jun Wang, Steve Patterson, Damian Wise, Alex Basauri, Mark DeFranza, Sandrio Elim, Weimin Dong, Shiguo Zhang, Mike Bougher, Jason Patterson, Suhit Das, Mike Grimshaw, Jason Farmer, Mark DeVito, Rob Martinsen
Author Affiliations +
Abstract
Peak optical power from single 1-cm diode laser bars is advancing rapidly across all commercial wavelengths. Progress in material performance is reviewed and we show that current trends imply there is no fundamental barrier to achieving peak powers of 1-kW per 1-cm diode laser bar. For bars with such high peak powers, commercially available reliable devices would be expected to deliver ~ 300-W per bar. Progress to date has allowed us to demonstrate > 400-W peak output from single 1-cm diode laser bars at emission wavelengths from 800-nm to 980-nm. The available range of emission wavelengths has also been increased, with 90-W bars shown at 660-nm and 24W at 1900-nm, complementing the 100-W bar previously demonstrated at 1470-nm. Peak power is seen to correlate closely peak efficiency. Further advances in diode laser efficiency and low thermal resistance packaging technology continue to drive these powers higher. The most critical improvements have been the reduction in the diode laser operating voltage through optimization of hetero-barriers (leading to 73% efficient 100-W bars on copper micro-channel) and a reduction in packaging thermal resistance by optimizing micro-channel performance (leading to < 0.2-oC/W thermal resistance).
© (2006) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Paul Crump, Jun Wang, Steve Patterson, Damian Wise, Alex Basauri, Mark DeFranza, Sandrio Elim, Weimin Dong, Shiguo Zhang, Mike Bougher, Jason Patterson, Suhit Das, Mike Grimshaw, Jason Farmer, Mark DeVito, and Rob Martinsen "Diode laser efficiency increases enable >400-W peak power from 1-cm bars and show a clear path to peak powers in excess of 1-kW", Proc. SPIE 6104, High-Power Diode Laser Technology and Applications IV, 610409 (15 February 2006); https://doi.org/10.1117/12.649552
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Cited by 15 scholarly publications.
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KEYWORDS
Semiconductor lasers

Resistance

Diodes

Gallium arsenide

Thermal efficiency

Copper

Packaging

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