Characteristics and reliability of high power multi-mode InGaAs strained quantum well single emitters with CW output powers of over 5-W

Yongkun Sin; Nathan Presser; Maribeth Mason; Steven C. Moss

doi:10.1117/12.673237

15 February 2006 Characteristics and reliability of high power multi-mode InGaAs strained quantum well single emitters with CW output powers of over 5-W

Yongkun Sin, Nathan Presser, Maribeth Mason, Steven C. Moss

Author Affiliations +

Proceedings Volume 6104, High-Power Diode Laser Technology and Applications IV; 61040H (2006) https://doi.org/10.1117/12.673237
Event: Lasers and Applications in Science and Engineering, 2006, San Jose, California, United States

Abstract

High-power multi-mode broad area InGaAs strained quantum well (QW) single emitters (λ ≈ 920-980nm) have been mainly used for industrial applications. Recently, these broad area lasers with CW output powers >5W have also found applications in communications as pump lasers for Er-Yb co-doped fiber amplifiers. This application requires very demanding characteristics including higher reliability than industrial applications. In contrast to 980nm single mode InGaAs strained QW lasers that are widely employed in both terrestrial and submarine applications, the fact that multimode lasers have never been used in optical communications necessitates careful study of these lasers. We report investigations of performance characteristics, reliability, and failure modes of high-power multi-mode single emitters. The lasers studied were broad area strained InGaAs-GaAs single QW lasers grown either by MOCVD or MBE. Typical apertures were around 100μm wide and cavity lengths were ≤4.2mm. AR-HR coated laser diode chips were mounted on carriers with junction down configuration to reduce thermal impedance. Laser thresholds were ≤453mA at RT. At 6A injection current typical CW output powers were over 5W at 25°C with wall-plug efficiency of ~60%. Characteristics measured included thermal impedance and optical beam profiles that are critical in understanding performance and reliability. Automatic current control burn-in tests with different stress conditions were performed and log (I)-V characteristics were measured at RT to correlate degradation in optical output power and an increase in trap density estimated from the 2κ•T term in bulk recombination current. We also report initial analysis of lifetest results and failure modes from these lasers.

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Yongkun Sin, Nathan Presser, Maribeth Mason, and Steven C. Moss "Characteristics and reliability of high power multi-mode InGaAs strained quantum well single emitters with CW output powers of over 5-W", Proc. SPIE 6104, High-Power Diode Laser Technology and Applications IV, 61040H (15 February 2006); https://doi.org/10.1117/12.673237

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