Light emission from an ambipolar semiconducting polymer field-effect transistor

James S. Swensen; Cesare Soci; Alan J. Heeger

doi:10.1117/12.644204

23 February 2006 Light emission from an ambipolar semiconducting polymer field-effect transistor

James S. Swensen, Cesare Soci, Alan J. Heeger

Author Affiliations +

Proceedings Volume 6117, Organic Photonic Materials and Devices VIII; 61170R (2006) https://doi.org/10.1117/12.644204
Event: Integrated Optoelectronic Devices 2006, 2006, San Jose, California, United States

Abstract

Ambipolar light-emitting field-effect transistors are fabricated with two different metals for the top-contact source and drain electrodes; a low-work-function metal defining the channel for the source electrode and a high-work-function metal defining the channel for the drain electrode. A thin film of polypropylene-co-1-butene on SiN_x is used as the gate dielectric on an n⁺⁺-Si wafer, which functioned as the substrate and the gate electrode. Transport data show ambipolar behavior. Recombination of electrons and holes results in a narrow zone of light emission within the channel. The location of the emission zone is controlled by the gate bias.

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James S. Swensen, Cesare Soci, and Alan J. Heeger "Light emission from an ambipolar semiconducting polymer field-effect transistor", Proc. SPIE 6117, Organic Photonic Materials and Devices VIII, 61170R (23 February 2006); https://doi.org/10.1117/12.644204

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