Carrier dynamics in ion-implanted semiconductors studied by simulation and observation of terahertz emission

J. Lloyd-Hughes; E. Castro-Camus; M. D. Fraser; H. H. Tan; C. Jagadish; M. B. Johnston

doi:10.1117/12.644074

15 February 2006 Carrier dynamics in ion-implanted semiconductors studied by simulation and observation of terahertz emission

J. Lloyd-Hughes, E. Castro-Camus, M. D. Fraser, H. H. Tan, C. Jagadish, M. B. Johnston

Author Affiliations +

Proceedings Volume 6118, Ultrafast Phenomena in Semiconductors and Nanostructure Materials X; 61180K (2006) https://doi.org/10.1117/12.644074
Event: Integrated Optoelectronic Devices 2006, 2006, San Jose, California, United States

Abstract

We have experimentally measured the terahertz radiation from a series of ion-implanted semiconductors, both from the bare semiconductor surface and from photoconductive switches fabricated on them. GaAs was implanted with arsenic ions, and InGaAs and InP with Fe⁺ iron ions, and all samples were annealed post implantation. An increase in emission power is observed at high frequencies, which we attribute to the ultrafast trapping of carriers. We use a three-dimensional carrier dynamics simulation to model the emission process. The simulation accurately predicts the experimentally observed bandwidth increase, without resorting to any fitting parameters. Additionally, we discuss intervalley scattering, the influence of space-charge fields, and the relative performance of InP, GaAs and InAs based photoconductive emitters.

Citation Download Citation

J. Lloyd-Hughes, E. Castro-Camus, M. D. Fraser, H. H. Tan, C. Jagadish, and M. B. Johnston "Carrier dynamics in ion-implanted semiconductors studied by simulation and observation of terahertz emission", Proc. SPIE 6118, Ultrafast Phenomena in Semiconductors and Nanostructure Materials X, 61180K (15 February 2006); https://doi.org/10.1117/12.644074

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