Faraday rotation in magneto-optical semiconductor waveguides for integrated isolators

Xiaoyun Guo; Tauhid Zaman; Rajeev J. Ram

doi:10.1117/12.652611

3 March 2006 Faraday rotation in magneto-optical semiconductor waveguides for integrated isolators

Xiaoyun Guo, Tauhid Zaman, Rajeev J. Ram

Proceedings Volume 6124, Optoelectronic Integrated Circuits VIII; 612416 (2006) https://doi.org/10.1117/12.652611
Event: Integrated Optoelectronic Devices 2006, 2006, San Jose, California, United States

Abstract

Magnetically doped Fe:InP and Fe:InGaAsP was characterized for verdict coefficient. The verdet coefficient was measured to be 180°/mm/T for Fe:InGaAsP, which is higher than YIG. High mesa waveguide of Fe doped InP/InGaAsP was fabricated and characterized. Faraday rotation in InP/InGaAsP waveguide was measured for the first time. The measured verdict coefficient is 33.3°/mm/T, which is only four times smaller than that of YIG.

Citation Download Citation

Xiaoyun Guo, Tauhid Zaman, and Rajeev J. Ram "Faraday rotation in magneto-optical semiconductor waveguides for integrated isolators", Proc. SPIE 6124, Optoelectronic Integrated Circuits VIII, 612416 (3 March 2006); https://doi.org/10.1117/12.652611

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