Paper
1 March 2006 Silicon-on-insulator-based photonic-crystal Mach-Zehnder interferometers
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Abstract
Si nanophotonics is anticipated to play a critical role in the future ultra-compact system integration due to the maturity of sub-micron silicon complementary metal oxide semiconductor (CMOS) technology. Photonic crystals (PhCs) provide a promising platform for developing novel optoelectronic devices with significantly reduced device size and power consumption. The active control of photonic crystal waveguides (PCWs) incorporated in Mach-Zehnder interferometers has been investigated in this paper. We designed and fabricated a PCW based silicon thermo-optic (TO) switch operating at 1.55 μm. A novel device structure was proposed to enhance the heat exchange efficiency between the source and the active PCW region, which resulted in a faster switching time (< 20μs) compared with the conventional structure. The required π phase shift between the two arms of the MZI has been successfully achieved within an 80 μm interaction distance. The maximum modulation depth of 84% was demonstrated for switching power of 78mW. For high-speed applications, a p-i-n structure based PCW electro-optical (EO) MZI modulator was proposed. The transient performance of such a device was evaluated using a two-dimensional semiconductor device simulator MEDICI. The simulated structure demonstrated a great potential to realize high-speed ultra-compact Si modulators in the GHz region.
© (2006) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Lanlan Gu, Yongqiang Jiang, Wei Jiang, Xiaonan Chen, Jin H. Choi, and Ray T. Chen "Silicon-on-insulator-based photonic-crystal Mach-Zehnder interferometers", Proc. SPIE 6128, Photonic Crystal Materials and Devices IV, 612815 (1 March 2006); https://doi.org/10.1117/12.645287
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Cited by 6 scholarly publications.
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KEYWORDS
Silicon

Waveguides

Photonic crystals

Oxides

Switching

Modulators

Switches

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