Paper
24 March 2006 Electron beam based modification of lithographic materials and the impact on critical dimensional metrology
H. Marchman, G. F. Lorusso, D. Soltz, L. Grella, Z. Luo, J. D. Byers, J. Varner, S. Vedula, R. Kuppa, A. R. Azordegan, G. Storms, L. H. Leunissen
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Abstract
CD-SEM is currently poised as the primary method of choice for CD metrology because of its nanometer scale spatial resolution, superior precision, and relatively high throughput. However, issues still continue to emerge that can threaten the measurement performance for the various sample types encountered. The impact of issues arising from electron beam induced modification of the sample materials on critical dimensional metrology and lithographic process control will be assessed and approaches to mitigate these effects will be proposed. The two primary issues of interest related to scanned electron beam based measurements of patterned lithographic materials in this article are shrinkage of the ArF 193nm resist and undesired deposition of contaminants occurring during CDSEM measurements.
© (2006) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
H. Marchman, G. F. Lorusso, D. Soltz, L. Grella, Z. Luo, J. D. Byers, J. Varner, S. Vedula, R. Kuppa, A. R. Azordegan, G. Storms, and L. H. Leunissen "Electron beam based modification of lithographic materials and the impact on critical dimensional metrology", Proc. SPIE 6152, Metrology, Inspection, and Process Control for Microlithography XX, 615227 (24 March 2006); https://doi.org/10.1117/12.656599
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Cited by 7 scholarly publications.
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KEYWORDS
Electron beams

Oxygen

Polymers

Electron beam lithography

Lithography

Atomic force microscopy

193nm lithography

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