MCT infrared photodiodes on the basis of graded gap &#1056;-&#1088; heterojunction grown by MBE HgCdTe epilayers on GaAs

V. V. Vasiliev; V. G. Remesnik D.D.S.; S. A. Dvoretsky; V. S. Varavin; N. N. Mikhailov; Yu. G. Sidorov; A. O. Suslyakov; A. L. Aseev

doi:10.1117/12.663506

22 April 2006 MCT infrared photodiodes on the basis of graded gap P-p heterojunction grown by MBE HgCdTe epilayers on GaAs

V. V. Vasiliev, V. G. Remesnik D.D.S., S. A. Dvoretsky, V. S. Varavin, N. N. Mikhailov, Yu. G. Sidorov, A. O. Suslyakov, A. L. Aseev

Author Affiliations +

Proceedings Volume 6189, Optical Sensing II; 61892A (2006) https://doi.org/10.1117/12.663506
Event: SPIE Photonics Europe, 2006, Strasbourg, France

Abstract

The measurement signal (S) to noise (N) ratio (S/N) of novel 128×128 FPA in temperature range 77 -130K was carried out. FPA for spectral range 8-12 μm was fabricated by B⁺implantation process into graded MCT P-p heterojunction with potential barrier. MCT P-p heterojunction with specific MCT composition throughout the thickness was grown by MBE on GaAs substrate by ellipsometric control in situ. The potential barrier was determined by the difference of MCT composition at absorber and p-n junction location layers and equal to ΔX_CdTe = 0,025. It was shown that based on P-p heterojunction FPA operated temperature and wavelength increases over routine one without P-p heterojunction. Keywords: graded gap layers, heterojunction, MCT, photodiodes, FPA.

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V. V. Vasiliev, V. G. Remesnik D.D.S., S. A. Dvoretsky, V. S. Varavin, N. N. Mikhailov, Yu. G. Sidorov, A. O. Suslyakov, and A. L. Aseev "MCT infrared photodiodes on the basis of graded gap P-p heterojunction grown by MBE HgCdTe epilayers on GaAs", Proc. SPIE 6189, Optical Sensing II, 61892A (22 April 2006); https://doi.org/10.1117/12.663506

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