10 June 2006Boron distribution profiling in asymmetrical n+-p silicon photodiodes and new creation concept of selectively sensitive photoelements for megapixel color photoreceivers
V. A. Gergel, A. V. Lependin, Yu. I. Tishin, I. V. Vanyushin, V. A. Zimoglyad
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Experimental results on spectral photo responsivity obtained for silicon n+-p photodiodes with implanted p+ layer in a silicon substrate are represented. It is demonstrated, that such p+ doping effectively shifts long-wave edge of the photodiode's spectral sensitivity in optical range of light spectrum, depending on the p+ layer bedding depth. A new concept of selectively sensitive photoelements development was stated for megapixel color photoreceivers on the basis of n+-p photodiode structures, containing one or more different (in depths) implanted layers, which form color separation potential barriers and lateral diffusion channels required for collecting of minority carriers generated by quanta of different wavelength.
V. A. Gergel,A. V. Lependin,Yu. I. Tishin,I. V. Vanyushin, andV. A. Zimoglyad
"Boron distribution profiling in asymmetrical n+-p silicon photodiodes and new creation concept of selectively sensitive photoelements for megapixel color photoreceivers", Proc. SPIE 6260, Micro- and Nanoelectronics 2005, 62600C (10 June 2006); https://doi.org/10.1117/12.677027
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V. A. Gergel, A. V. Lependin, Yu. I. Tishin, I. V. Vanyushin, V. A. Zimoglyad, "Boron distribution profiling in asymmetrical n+-p silicon photodiodes and new creation concept of selectively sensitive photoelements for megapixel color photoreceivers," Proc. SPIE 6260, Micro- and Nanoelectronics 2005, 62600C (10 June 2006); https://doi.org/10.1117/12.677027