Mask absorber material dependence of 2D OPC in ArF high NA lithography

Wen-Hao Cheng; Jeff Farnsworth

doi:10.1117/12.692807

21 June 2006 Mask absorber material dependence of 2D OPC in ArF high NA lithography

Wen-Hao Cheng, Jeff Farnsworth

Author Affiliations +

Proceedings Volume 6281, 22nd European Mask and Lithography Conference; 62810V (2006) https://doi.org/10.1117/12.692807
Event: 22nd European Mask and Lithography Conference, 2006, Dresden, Germany

Abstract

Rigorous optical proximity correction (OPC) for 3D reticle effects is critical to the success of 193nm wavelength immersion lithography implementation. The impact of 2D and 3D mask polarization and shadowing effects to 2D imaging in ultra high Numerical Aperture (NA) low-k1 imaging is assessed by simulation. An end-to-end (ETE) dense line 2D feature of various embedded (attenuated) phase shift mask (ePSM) with various material of film stack is studied. Line-end pullback is shown correlated with mask shadowing under TE-polarized OAI. Polarized OAI phase calibrated thinner mask absorber provides less shadowing, better 2D imaging window, and enables further scaling of mask feature patterning.

Citation Download Citation

Wen-Hao Cheng and Jeff Farnsworth "Mask absorber material dependence of 2D OPC in ArF high NA lithography", Proc. SPIE 6281, 22nd European Mask and Lithography Conference, 62810V (21 June 2006); https://doi.org/10.1117/12.692807

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

;

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE