Mask pattern correction to compensate for the effect of off-axis incidence in EUV lithography

Minoru Sugawara; Iwao Nishiyama

doi:10.1117/12.681845

20 May 2006 Mask pattern correction to compensate for the effect of off-axis incidence in EUV lithography

Minoru Sugawara, Iwao Nishiyama

Proceedings Volume 6283, Photomask and Next-Generation Lithography Mask Technology XIII; 62830L (2006) https://doi.org/10.1117/12.681845
Event: Photomask and Next Generation Lithography Mask Technology XIII, 2006, Yokohama, Japan

Abstract

This study investigated the feasibility of individual mask-pattern corrections to compensate for the effects of off-axis incidence and optical proximity effects for a reflective mask in EUV lithography. Individual mask pattern corrections for the effects of off-axis incidence are made by biasing, and then merged with conventional optical proximity effect corrections (OPC). This method provides good pattern fidelity in printed images on a wafer. Three evaluation functions were used to determine the amount of bias; they are related to the energy of the light reflected from a mask surface, the energy of 0th-order diffracted light, and the energy of light passing through the pupil. Merging to obtain the final corrected mask pattern allows the use of conventional OPC algorithms and is a simple method that is applicable regardless of the relationship between the direction of the incident light and the orientation of the edges of mask patterns.

Citation Download Citation

Minoru Sugawara and Iwao Nishiyama "Mask pattern correction to compensate for the effect of off-axis incidence in EUV lithography", Proc. SPIE 6283, Photomask and Next-Generation Lithography Mask Technology XIII, 62830L (20 May 2006); https://doi.org/10.1117/12.681845

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