Paper
7 September 2006 Monolithic integration of all dielectric based asymmetric filter stacks on p-i-n photodetector
Vicknesh Shanmugan, Cao Yu, Ramam Akkipeddi
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Abstract
A conventional p-i-n photodetector designed for absorption in the C-band region has been integrated with a low-cost all-dielectric based filter for single wavelength detection at 1542nm. The dielectric based filter of SiO2 cavity layer sandwiched between two pairs of highly reflecting Si3N4/SiO2 mirrors are deposited by PECVD. The full width at half maximum (FWHM) of the reflectance spectra for the filter is measured to be 9.2nm. Reflectance measurement indicates a transmittivity of 83.6% at 1542nm, while reflecting all other wavelengths from 1400 to 1730nm. Dark-current measurement of the photodetector is in the range of 10-8A at a reverse bias voltage of -2V. A photocurrent enhancement of 4 orders of magnitude, at an incident wavelength of 1542nm for a reverse-bias voltage of -2V is observed.
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Vicknesh Shanmugan, Cao Yu, and Ramam Akkipeddi "Monolithic integration of all dielectric based asymmetric filter stacks on p-i-n photodetector", Proc. SPIE 6294, Infrared and Photoelectronic Imagers and Detector Devices II, 62940K (7 September 2006); https://doi.org/10.1117/12.674332
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KEYWORDS
Mirrors

Dielectric filters

Reflectivity

Photodetectors

Silicon

Dielectrics

Electronic filtering

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