Microstructural effects on the performance of poly(thiophene) field-effect transistors

Alberto Salleo; Leslie H. Jimison; Matthew M. Donovan; Michael L. Chabinyc; Michael F. Toney

doi:10.1117/12.681171

25 August 2006 Microstructural effects on the performance of poly(thiophene) field-effect transistors

Alberto Salleo, Leslie H. Jimison, Matthew M. Donovan, Michael L. Chabinyc, Michael F. Toney

Proceedings Volume 6336, Organic Field-Effect Transistors V; 63360C (2006) https://doi.org/10.1117/12.681171
Event: SPIE Optics + Photonics, 2006, San Diego, California, United States

Abstract

The performance of polymer field-effect transistors is highly dependent on their processing history. For instance, thermal processing plays a role in micro-structure development and consequently in device performance. A transport model was developed based on the semiconductor micro-structure where highly mobile states are located in the crystalline areas and defects and disordered regions correspond to areas where carriers are trapped. By applying this model to electrical characterization data of PQT-12 (a regio-regular polythiophene), it is found that annealing tightens the energetic distribution of the traps. Films quenched from the melt performed worse than annealed films due to an increased trap density and broader energy distribution of the traps. X-ray diffraction in grazing and specular geometry was carried out at the Stanford Synchrotron Radiation Laboratory on PQT-12 thin films to reconcile the predictions of the transport model with the micro-structure of the PQT-12 thin films. In all cases the polymer crystallites are textured with the π-stacking direction in the plane of charge transport and the rocking curves indicate the existence of a population of highly oriented crystallites. Annealing the as-spun films improves the crystallinity and texture, in agreement with the transport model. Quenching produces defects in the films, which are likely to produce traps, thereby lowering the carrier mobility.

Citation Download Citation

Alberto Salleo, Leslie H. Jimison, Matthew M. Donovan, Michael L. Chabinyc, and Michael F. Toney "Microstructural effects on the performance of poly(thiophene) field-effect transistors", Proc. SPIE 6336, Organic Field-Effect Transistors V, 63360C (25 August 2006); https://doi.org/10.1117/12.681171

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