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16 February 2007 Front Matter: Volume 6473
Proceedings Volume 6473, Gallium Nitride Materials and Devices II; 647301 (2007) https://doi.org/10.1117/12.727171
Event: Integrated Optoelectronic Devices 2007, 2007, San Jose, California, United States
Abstract
This PDF file contains the front matter associated with SPIE Proceedings Volume 6473, including the Title Page, Copyright information, Table of Contents, Introduction (if any), and the Conference Committee listing.
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
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"Front Matter: Volume 6473", Proc. SPIE 6473, Gallium Nitride Materials and Devices II, 647301 (16 February 2007); https://doi.org/10.1117/12.727171
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KEYWORDS
Gallium nitride
Light emitting diodes
Field effect transistors
Physics
Laser applications
Quantum wells
Nickel
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