Characterization of the carrier dynamics and interface-state charge fluctuations in quaternary AlInGaN multiple quantum well heterostructures

Chih-Chun Ke; Cheng-Wei Hung; Da-Chuan Kuo; Wei-Jen Chen; Hui-Tang Shen; Ya-Fen Wu; Jen-Cheng Wang; Tzer-En Nee

doi:10.1117/12.703472

8 February 2007 Characterization of the carrier dynamics and interface-state charge fluctuations in quaternary AlInGaN multiple quantum well heterostructures

Chih-Chun Ke, Cheng-Wei Hung, Da-Chuan Kuo, Wei-Jen Chen, Hui-Tang Shen, Ya-Fen Wu, Jen-Cheng Wang, Tzer-En Nee

Author Affiliations +

Proceedings Volume 6473, Gallium Nitride Materials and Devices II; 64730B (2007) https://doi.org/10.1117/12.703472
Event: Integrated Optoelectronic Devices 2007, 2007, San Jose, California, United States

Abstract

Nitride-based light-emitting diodes (LEDs) have recently attracted to understand the emission mechanisms in novel multiple quantum well (MQW) heterosturctures. To understand substantially the unique spectral response, it is necessary to examine the carrier transport behavior. In this work, we studied the unique correlations between the carrier dynamics and optical characteristics of the quaternary AlInGaN MQW heterostructures with different barrier widths. It has been found that the photoluminescence peak energy of quaternary AlInGaN MQW blueshifts when decreasing the barrier width. This is attributed to the redistribution among the well and barrier of the strong electrostatic fields induced by polarization effect. It resulted in not only the diminutions of the charge density induced by piezoelectric field, but also the increments of the interface-state charge distribution from the collective influence of alloy disorder and interface roughness. We resort the Arrhenius plots to demonstrate the localized effect originated from indium fluctuation. Our results show the exciton-localization effect can be enhanced monotonically by increasing the barrier widths. On the other hand, we corroborated the surface charge density increased while increasing barrier widths between the epitaxial layers in this investigation.

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Chih-Chun Ke, Cheng-Wei Hung, Da-Chuan Kuo, Wei-Jen Chen, Hui-Tang Shen, Ya-Fen Wu, Jen-Cheng Wang, and Tzer-En Nee "Characterization of the carrier dynamics and interface-state charge fluctuations in quaternary AlInGaN multiple quantum well heterostructures", Proc. SPIE 6473, Gallium Nitride Materials and Devices II, 64730B (8 February 2007); https://doi.org/10.1117/12.703472

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