Point defect reduction in GaN layers grown with the aid of SiNx nanonet by metalorganic chemical vapor deposition

S. A. Chevtchenko; J. Xie; Y. Fu; X. Ni; H. Morkoç; C. W. Litton

doi:10.1117/12.706828

8 February 2007 Point defect reduction in GaN layers grown with the aid of SiN_x nanonet by metalorganic chemical vapor deposition

S. A. Chevtchenko, J. Xie, Y. Fu, X. Ni, H. Morkoç, C. W. Litton

Author Affiliations +

Proceedings Volume 6473, Gallium Nitride Materials and Devices II; 64730N (2007) https://doi.org/10.1117/12.706828
Event: Integrated Optoelectronic Devices 2007, 2007, San Jose, California, United States

Abstract

Reduction of deep centers in GaN layers grown employing nano-ELO SiN_x porous nanonetworks has been studied by deep-level transient spectroscopy (DLTS). The obtained concentrations of deep traps in layers with SiN_x nanonetworks were compared with an otherwise identical reference sample and with another sample grown by employing conventional ELO technique. Two traps, labeled A (0.54-0.58 eV) and B (0.20-0.23 eV), were delineated in all layers with trap A being dominant in the temperature range 80-400 K. The concentration of trap A in SiN_x layers was found to be lower by 2-4 times compare to the reference sample. The minimum concentration 7.5x10¹⁴ cm^-3 was obtained in the layer grown on SiO₂ stripe pattern which is ~6 times lower compare to the reference sample. We have found the logarithmic capture mechanism up to ~20 ms for deep center A. Considering that the lateral growth mainly reduces the edge dislocations in our films it is tempting to suggest that structural defects that may have a direct and or indirect role in the creation of the dominant trap which we believe are located close to each other along the edge threading dislocation lines. In addition, a small blue shift, compare to a strain free layers, of the neutral-donor-bound-exciton line (D⁰X_A) observed in the photoluminescence spectra of the samples grown with lateral overgrowth is indicative of partial strain relief.

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S. A. Chevtchenko, J. Xie, Y. Fu, X. Ni, H. Morkoç, and C. W. Litton "Point defect reduction in GaN layers grown with the aid of SiN_x nanonet by metalorganic chemical vapor deposition", Proc. SPIE 6473, Gallium Nitride Materials and Devices II, 64730N (8 February 2007); https://doi.org/10.1117/12.706828

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