AlGaN/GaN field-plate FETs for microwave power applications

H. Miyamoto; Y. Ando; Y. Okamoto; T. Nakayama; A. Wakejima; T. Inoue; Y. Murase; K. Ota; K. Yamanoguchi; N. Kuroda; M. Tanomura; K. Matsunaga

doi:10.1117/12.707334

15 February 2007 AlGaN/GaN field-plate FETs for microwave power applications

H. Miyamoto, Y. Ando, Y. Okamoto, T. Nakayama, A. Wakejima, T. Inoue, Y. Murase, K. Ota, K. Yamanoguchi, N. Kuroda, M. Tanomura, K. Matsunaga

Author Affiliations +

Proceedings Volume 6473, Gallium Nitride Materials and Devices II; 647315 (2007) https://doi.org/10.1117/12.707334
Event: Integrated Optoelectronic Devices 2007, 2007, San Jose, California, United States

Abstract

This paper describes the performance of AlGaN/GaN Field-Plate FETs and amplifiers for microwave power applications. Recessed-gate FETs with a single field-modulating plate (FP) and advanced dual field-modulating plates (FP's) FP are developed for high-voltage microwave power operation. The developed single FP-FETs exhibited a 230-W CW output power at 2 GHz and a 100-W CW output power at 5 GHz. The developed dual FP-FET provides higher gain, increased linearity and stability since the second FP effectively reduces feedback capacitance. Under a 2.15-GHz W-CDMA modulation scheme, the dual-FP-FET achieved a-state-of-the-art combination of 160-W output power and a 17.5 dB linear gain. The developed amplifier using two device dice for W-CDMA base stations delivers a 370-W peak output power and the amplifier for other L/S band high power applications delivers a pulsed 750-W output power at 2.14 GHz.

Citation Download Citation

H. Miyamoto, Y. Ando, Y. Okamoto, T. Nakayama, A. Wakejima, T. Inoue, Y. Murase, K. Ota, K. Yamanoguchi, N. Kuroda, M. Tanomura, and K. Matsunaga "AlGaN/GaN field-plate FETs for microwave power applications", Proc. SPIE 6473, Gallium Nitride Materials and Devices II, 647315 (15 February 2007); https://doi.org/10.1117/12.707334

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