Paper
8 February 2007 TM-mode lasing and anisotropic polarization properties of AlGaN multiple quantum well lasers in deep-ultraviolet spectral region
Hideo Kawanishi, Masanori Senuma, Takeaki Nukui
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Abstract
We investigated rolls of crystal-field split-off valence band (CH VB) in the deep-UV laser by measuring a transverse-magnetic-field (TM)-mode polarization of lasing and spontaneous surface and edge emissions above and below the lasing threshold from the AlGaN multiple-quantum-well (MQW) laser at 240.8 nm and the anisotropic optical properties of c-plane AlxGa1-xN multiple quantum wells and m-plane AlxGa1-xN single layer. These results indicate that CH VB plays an important role in (E//c) polarization and anisotropic emissions from AlxGa1-xN with x≧0.5.
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Hideo Kawanishi, Masanori Senuma, and Takeaki Nukui "TM-mode lasing and anisotropic polarization properties of AlGaN multiple quantum well lasers in deep-ultraviolet spectral region", Proc. SPIE 6473, Gallium Nitride Materials and Devices II, 64731D (8 February 2007); https://doi.org/10.1117/12.698513
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CITATIONS
Cited by 2 scholarly publications.
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KEYWORDS
Polarization

Aluminum

Gallium

Deep ultraviolet

Edge emitting semiconductor lasers

Optical properties

Quantum wells

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