Paper
8 February 2007 High quality UV AlGaN/AlGaN distributed Bragg reflectors and microcavities
Oleg Mitrofanov, S. Schmult, M. J. Manfra, T. Siegrist, N. G. Weimann, A. M. Sergent, R. J. Molnar
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Abstract
We demonstrate high-reflectivity crack-free Al0.18Ga0.82N/Al0.8Ga0.2N distributed Bragg reflectors (DBR) and monolithic microcavities grown by molecular beam epitaxy on thick c-axis GaN templates. The elastic strain energy in the epilayer is minimized by compensating the compressive and tensile stress in every period of the DBR structure. A 25 period DBR mirror provides a 26nm-wide stop band centered at 347 nm with the maximum reflectivity higher than 99%. The high-reflectivity DBRs can be used to form high Q-factor monolithic AlGaN/AlGaN microcavities.
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Oleg Mitrofanov, S. Schmult, M. J. Manfra, T. Siegrist, N. G. Weimann, A. M. Sergent, and R. J. Molnar "High quality UV AlGaN/AlGaN distributed Bragg reflectors and microcavities", Proc. SPIE 6473, Gallium Nitride Materials and Devices II, 64731G (8 February 2007); https://doi.org/10.1117/12.707924
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Cited by 1 scholarly publication and 5 patents.
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KEYWORDS
Aluminum

Reflectivity

Gallium

Gallium nitride

Optical microcavities

Absorption

Distributed Bragg reflectors

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