New developments in ZnO materials and devices

D. C. Look

doi:10.1117/12.716401

20 February 2007 New developments in ZnO materials and devices

D. C. Look

Proceedings Volume 6474, Zinc Oxide Materials and Devices II; 647402 (2007) https://doi.org/10.1117/12.716401
Event: Integrated Optoelectronic Devices 2007, 2007, San Jose, California, United States

Abstract

We will examine a few of the outstanding new ZnO materials and device developments published in 2006. In the area of bulk crystal growth, high-quality 3-inch ZnO wafers grown by the hydrothermal method have become available, and Bridgman growth has also been developed. In the thin-film area, excellent ZnO layers have been grown by liquid-phase epitaxy. Other types of epitaxial material have also shown improvements, and the quantum Hall effect has now been observed, along with photoluminescence (PL) linewidths as low as 110 &mgr;eV. In the area of impurity characterization, radioactive-tracer methods have been used to make positive identifications of the PL donor-bound exciton lines I₈ and I₉, as due to Ga and In, respectively. Our understanding of the common impurity H has also advanced, because it is now known from both theory and experiment that interstitial H is not stable at room temperature. The same is true of the native interstitials, Zn_I and O_I. New results suggest that the common H-related shallow donor is probably multibonded H substitutional on an O site, and the Zn_I-related shallow donor is probably a complex, such as Zn_I-NO. In the important area of p-type ZnO, it has been demonstrated that Li and N co-doped material has a resistivity as low as 1 &OHgr;-cm and is stable for at least one year. Also, many groups were able to make thin-film and nanowire or nanorod p-n junction light emitting diodes (LEDs). Another very exciting development was the creation of an edge-emitting laser diode, from rows of n-ZnO nanocrystals on a p-GaN thin film. Electronic devices, including transparent transistors, also made great strides, producing record field-effect mobilities.

Citation Download Citation

D. C. Look "New developments in ZnO materials and devices", Proc. SPIE 6474, Zinc Oxide Materials and Devices II, 647402 (20 February 2007); https://doi.org/10.1117/12.716401

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available