Paper
20 February 2007 Advances in nonpolar ZnO homoepitaxy: 1D surface nanostructure and electron transport
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Abstract
The development of epitaxial growth techniques for the fabrication of nanostructures provides advantages for nanoscale engineering and has yielded many impressive results. ZnO possesses attractive characteristics that include optical, electric and magnetic properties. This material can be utilized to delineate new phenomena through an investigation of surface nanostructures and quantum heterostructures. Homoepitaxy in ZnO can generate specific growth directions in the absence of lattice mismatch at the interface between the film and substrate. Many reports have appeared in the past year concerning the layer growth of nonpolar ZnO. Nonpolar planes are expected to yield large in-plane anisotropy in electrical and optical characterizatics. In nonpolar (10-10) growth using laser-MBE, we found that novel in situ growth techniques allowed for the fabrication of dense arrays of conductive one-dimensional nanostripes with a high degree of lateral periodicity. Highly anisotropic surface morphologies markedly influenced electron transport of ZnO single layers and Mg0.12Zn0.88O/ZnO multi-quantum wells (MQWs) with conductivity parallel to the nanostripe arrays being more than one order of magnitude larger than that observed perpendicular to the nanostripe arrays.
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Hiroaki Matsui and Hitoshi Tabata "Advances in nonpolar ZnO homoepitaxy: 1D surface nanostructure and electron transport", Proc. SPIE 6474, Zinc Oxide Materials and Devices II, 64740O (20 February 2007); https://doi.org/10.1117/12.715020
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Cited by 3 scholarly publications.
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KEYWORDS
Zinc oxide

Electron transport

Zinc

Nanostructures

Anisotropy

Magnesium

Gallium arsenide

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