Paper
7 March 2007 Silicon p-i-n optical waveguide modulators fabricated on the silicon and silicon-on-insulator substrates
Mao-Teng Hsu, Ricky W. Chuang, Jia-Ching Liao
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Abstract
The fabrication and characterization of the p-i-n optical waveguide modulators on silicon-on-insulator (SOI) substrate were demonstrated. The modulation was based on the mechanism of carrier injection, or plasma dispersion effect. The corresponding p and n regions were defined in both types of silicon substrates (conventional p-doped and highly resistive SOI substrates with respective resistivities of &rgr;~7-10&OHgr;-cm and &rgr;~7000-10000&OHgr;-cm) using the spin-on-dopant (SOD) technique. The SOD diffusion process was conducted at 900-1000°C in nitrogen ambient. The diffusion time and temperature, and the resistivity of SOI substrate used were the primary parameters dictating the resultant dopant concentrations and diffusion depths. For the modulators fabricated with various waveguide widths and electrode lengths, the corresponding modulation index was enhanced in response to an increase in the electrode (or modulation) length and/or a decrease in waveguide width. The highest modulation index of ~4.15% was successfully achieved for a silicon p-i-n waveguide modulator with 5&mgr;m,wide waveguide and 7mm-long modulation electrode.
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Mao-Teng Hsu, Ricky W. Chuang, and Jia-Ching Liao "Silicon p-i-n optical waveguide modulators fabricated on the silicon and silicon-on-insulator substrates", Proc. SPIE 6475, Integrated Optics: Devices, Materials, and Technologies XI, 64751A (7 March 2007); https://doi.org/10.1117/12.700601
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KEYWORDS
Modulation

Modulators

Silicon

Waveguides

Diffusion

Electrodes

Doping

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