Modulation spectroscopy characterization of InAs/GaInAsP/InP quantum dash laser structures

G. Sęk; M. Motyka; K. Ryczko; J. Andrzejewski; R. Kudrawiec; J. Misiewicz; F. Lelarge; B. Rousseau; G. Patriarche

doi:10.1117/12.713611

22 February 2007 Modulation spectroscopy characterization of InAs/GaInAsP/InP quantum dash laser structures

G. Sęk, M. Motyka, K. Ryczko, J. Andrzejewski, R. Kudrawiec, J. Misiewicz, F. Lelarge, B. Rousseau, G. Patriarche

Proceedings Volume 6481, Quantum Dots, Particles, and Nanoclusters IV; 64810D (2007) https://doi.org/10.1117/12.713611
Event: Integrated Optoelectronic Devices 2007, 2007, San Jose, California, United States

Abstract

We report on the modulation spectroscopy investigation (in a form of photoreflectance (PR)) of self-assembled InAs/GaInAsP quantum dash structures grown by gas source molecular beam epitaxy on InP (100) substrates and designed for laser applications at 1.55 μm wavelength range in two different architectures: dash-in-a-barrier and dash-in-a-well. The dashes parameters have been determined by cross-sectional and plane-view transmission electron microscopy to be of typical height and width of about 2 per 20 nm and length from 50 to more than 200 nm, depending on the growth conditions. The part of the PR spectra related to the quantum dash layer has revealed several well distinguished transitions with the energy separation between the ground state and first excited state ones of about 150 meV independently of the length of the dashes for the dash-in-a-barrier and twice less for dash-in-a-well-designs, respectively. Our theoretical analysis based on effective mass approximation calculations has shown that all the higher order state transitions are related to the InAs wetting layer quantum well, where its parameters, as WL thickness and conduction band offset ratio, have been estimated on the base of agreement with the experimental data. The PR-based optical properties have found confirmation in the PL thermal quenching and device characteristics.

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G. Sęk, M. Motyka, K. Ryczko, J. Andrzejewski, R. Kudrawiec, J. Misiewicz, F. Lelarge, B. Rousseau, and G. Patriarche "Modulation spectroscopy characterization of InAs/GaInAsP/InP quantum dash laser structures", Proc. SPIE 6481, Quantum Dots, Particles, and Nanoclusters IV, 64810D (22 February 2007); https://doi.org/10.1117/12.713611

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