Paper
8 February 2007 Tunable broad-area InGaN laser diodes in external cavity
K. Komorowska, P. Wisniewski, R. Czernecki, P. Prystawko, M. Leszczynski, T. Suski, I. Grzegory, S. Porowski, S. Grzanka, M. Maszkowicz, P. Perlin
Author Affiliations +
Abstract
We have used pulsed operation, wide area InGaN laser diodes in conjunction with Littrow type external cavity to build a tunable, single mode laser operating around 398 nm. Special coatings had been applied to the device - antireflection coating on the output mirror and high - reflector on the back facet. The tuning range of this device was 5.5 nm, the maximum output power reached 40mW in a single mode operation. This value compares well with the output power of an uncoupled laser diode -170mW. The coupling between the external cavity and the internal resonator is estimated to be around 2.5% for a waveguide dimensions of 20 x 0.3 x 500&mgr;m3.
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
K. Komorowska, P. Wisniewski, R. Czernecki, P. Prystawko, M. Leszczynski, T. Suski, I. Grzegory, S. Porowski, S. Grzanka, M. Maszkowicz, and P. Perlin "Tunable broad-area InGaN laser diodes in external cavity", Proc. SPIE 6485, Novel In-Plane Semiconductor Lasers VI, 648502 (8 February 2007); https://doi.org/10.1117/12.698285
Lens.org Logo
CITATIONS
Cited by 3 scholarly publications.
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Semiconductor lasers

Diffraction gratings

Indium gallium nitride

Gallium nitride

Diodes

Spectroscopy

Antireflective coatings

RELATED CONTENT


Back to Top