Paper
15 March 2007 Impact of interface treatment with assisted ion beam on Mo-Si multilayer formation for EUVL mask blanks
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Abstract
To reduce the surface roughness of a substrate for mask blanks for extreme ultraviolet (EUV) lithography, the layers of a Mo-Si multilayer structure being deposited by magnetron sputtering were treated with an assisted ion beam. The effectiveness was analyzed by atomic force microscopy, X-ray reflection diffraction, and EUV reflectivity measurements, which revealed a large improvement in the interface and surface roughness, resulting in a multilayer with better EUV performance than one formed without such treatment.
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Kenji Hiruma, Yuusuke Tanaka, Shinji Miyagaki, Jerry Cullins, and Iwao Nishiyama "Impact of interface treatment with assisted ion beam on Mo-Si multilayer formation for EUVL mask blanks", Proc. SPIE 6517, Emerging Lithographic Technologies XI, 651720 (15 March 2007); https://doi.org/10.1117/12.711909
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KEYWORDS
Extreme ultraviolet

Interfaces

Surface roughness

Reflectivity

Sputter deposition

Extreme ultraviolet lithography

Atomic force microscopy

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