Paper
15 March 2007 Template flatness issue for UV curing nanoimprint lithography
P. Voisin, A. Jouve, M. Zelsmann, C. Gourgon, J. Boussey
Author Affiliations +
Abstract
UV curing Nanoimprint Lithography (UV-NIL) is an emerging lithographic technique, seen as a potential candidate for the 32nm node by the ITRS road map. As the stamp is in direct contact with the substrate, template flatness is a critical issue in addition to standard optical lithography mask requirements (high-resolution, low defectivity, CD control...). This is why we propose to study the impact of the template flatness on the reproduction quality and on the imprint uniformity. After having studied the Residual Layer Thickness (RLT) uniformity intra-dies and compared it to different stamps flatness, the impact of UV-NIL process optimisations, such as the substrate quality and filling times, on RLT uniformity intra- and inter-dies were evaluated. We observed that a high stamp waviness is always transferred into the resist, while a low stamp waviness (under a few hundreds of nanometers range) has no impact on the RLT uniformity.
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
P. Voisin, A. Jouve, M. Zelsmann, C. Gourgon, and J. Boussey "Template flatness issue for UV curing nanoimprint lithography", Proc. SPIE 6517, Emerging Lithographic Technologies XI, 65172D (15 March 2007); https://doi.org/10.1117/12.712032
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KEYWORDS
Semiconducting wafers

Polishing

Silica

Scanning electron microscopy

Nanoimprint lithography

Ultraviolet radiation

Etching

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