Small field exposure tool (SFET) light source

Tamotsu Abe; Takashi Suganuma; Masato Moriya; Takayuki Yabu; Takeshi Asayama; Hiroshi Someya; Yoshifumi Ueno; Georg Soumagne; Akira Sumitani; Hakaru Mizoguchi

doi:10.1117/12.711241

21 March 2007 Small field exposure tool (SFET) light source

Tamotsu Abe, Takashi Suganuma, Masato Moriya, Takayuki Yabu, Takeshi Asayama, Hiroshi Someya, Yoshifumi Ueno, Georg Soumagne, Akira Sumitani, Hakaru Mizoguchi

Author Affiliations +

Proceedings Volume 6517, Emerging Lithographic Technologies XI; 65173C (2007) https://doi.org/10.1117/12.711241
Event: SPIE Advanced Lithography, 2007, San Jose, California, United States

Abstract

A laser produced plasma light source for a small field exposure tool (SFET) has been developed at the EUVA Hiratsuka R&D center. The light source consists of the following components: The drive laser of the xenon plasma source is a short-pulse, high-power KrF laser that has been developed in cooperation with Gigaphoton Inc. and Komatsu Ltd. The laser has an unstable resonator and produces a maximum output power of 580W at 4kHz repetition rate. The xenon target is a 50 micrometer diameter liquid jet with a speed of about 35 m/s. The source has been designed to generate 0.5W in-band power at the intermediate focus (IF) at a collecting solid angle of pi sr. The source includes automatic control, e.g. jet and plasma position control, and an electrical interface for the exposure tool. The performance of the source at IF has been evaluated by Canon Inc. This paper explains source performances. Especially, results of IF parameters like image size, position stability and out of band radiation are presented.

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Tamotsu Abe, Takashi Suganuma, Masato Moriya, Takayuki Yabu, Takeshi Asayama, Hiroshi Someya, Yoshifumi Ueno, Georg Soumagne, Akira Sumitani, and Hakaru Mizoguchi "Small field exposure tool (SFET) light source", Proc. SPIE 6517, Emerging Lithographic Technologies XI, 65173C (21 March 2007); https://doi.org/10.1117/12.711241

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