CD measurement in flash memory using substrate current technology

Yeong-Uk Ko; Keizo Yamada; Takeo Ushiki

doi:10.1117/12.712477

6 April 2007 CD measurement in flash memory using substrate current technology

Yeong-Uk Ko, Keizo Yamada, Takeo Ushiki

Proceedings Volume 6518, Metrology, Inspection, and Process Control for Microlithography XXI; 65182T (2007) https://doi.org/10.1117/12.712477
Event: SPIE Advanced Lithography, 2007, San Jose, California, United States

Abstract

We analyzed substrate current signal of flash memory with floating and control gates using EB-Scope for the measurement of bottom CD. We showed that the signals come from capacitance structure of the floating and control gates. From this analysis, we showed we can get the information of electrical characteristics of floating and control gates such as capacitance, resistance and time constant as well as the bottom CD of flash memory with floating and control gates. This technique form this analysis can contribute yield enhancement in flash memory manufacturing process by in-situ monitoring.

Citation Download Citation

Yeong-Uk Ko, Keizo Yamada, and Takeo Ushiki "CD measurement in flash memory using substrate current technology", Proc. SPIE 6518, Metrology, Inspection, and Process Control for Microlithography XXI, 65182T (6 April 2007); https://doi.org/10.1117/12.712477

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