Paper
30 March 2007 A novel 248-nm wet-developable BARC for trench applications
Charles J. Neef, Debra Thomas
Author Affiliations +
Abstract
A novel polyamic acid-based, 248-nm wet-developable BARC has been prepared to improve structure clear-out and lessen post-development residue. This material showed an excellent process window and controllable development rates that can be achieved by simply changing the formulation. It is a highly absorbing BARC with n and k values equal to 1.73 and 0.49, respectively. Lithography with this material has shown 180-nm dense profiles with P338 and M230Y. These profiles exhibited minimal undercutting with good clearing between the lines. Clear-out has been demonstrated for 120-nm trenches. Post-development residue of the material was tested at various temperatures and was determined to be 6 Å or less. In addition, sublimation was evaluated.
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Charles J. Neef and Debra Thomas "A novel 248-nm wet-developable BARC for trench applications", Proc. SPIE 6519, Advances in Resist Materials and Processing Technology XXIV, 65192Z (30 March 2007); https://doi.org/10.1117/12.712459
Lens.org Logo
CITATIONS
Cited by 3 scholarly publications and 2 patents.
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Lithography

Semiconducting wafers

Reflectivity

Silicon

Argon

Chromophores

Temperature metrology

Back to Top